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| CXT5401 SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA W C C/W 160 150 5.0 500 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100C 50 BVCBO IC=100A 160 BVCEO IC=1.0mA 150 BVEBO IE=10A 5.0 VCE(SAT) IC=10mA, IB=1.0mA 0.2 VCE(SAT) IC=50mA, IB=5.0mA 0.5 VBE(SAT) IC=10mA, IB=1.0mA 1.0 VBE(SAT) IC=50mA, IB=5.0mA 1.0 hFE VCE=5.0V, IC=1.0mA 50 hFE VCE=5.0V, IC=10mA 60 240 hFE VCE=5.0V, IC=50mA 50 fT VCE=10V, IC=10mA, f=100MHz 100 300 Cob VCB=10V, IE=0, f=1.0MHz 6.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 200 NF VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz 8.0 UNITS nA A V V V V V V V MHz pF dB R3 ( 20-December 2001) Central TM CXT5401 SURFACE MOUNT PNP SILICON TRANSISTOR Semiconductor Corp. SOT-89 CASE - MECHANICAL OUTLINE A B E F G H 1 C J L M 2 K R3 3 BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 20-December 2001) |
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